The honor of being selected as a Distinguished Paper
• Participating students: Hak-yeol Bae, Seong-wu Jeon, Hyeon-jun Choi, Chun-hyeong Jo, Yun-hyeok Kim, Jun-seok Hwang, and Je-yeop An (College of Electrical Engineering & Computer Science)
• Academic advisor: Professor Dong-myeong Kim, Dae-hwan Kim, and Seong-jin Choi
• Title of thesis: Separate Extraction Technique for Intrinsic Donor- and Acceptor-like Density-of-States over Full-Energy Range Sub-Bandgap in Amorphous Oxide Semiconductor Thin Film Transistors by Using One-Shot Monochromatic Photonic Capacitance-Voltage Characteristics


Thanks to the researchers of the Semiconductor Devices and Integrated Circuits Lab (S!LK) in the College of Electrical Engineering & Computer Science (Including Hak-yeol Bae (Master), Seong-wu Jeon (Master’s course), Hyeon-jun Choi (Master’s course), Chun-hyeong Jo (Master’s course), Yun-hyeok Kim (Master’s course), Jun-seok Hwang (Master’s course), and Je-yeop An (Master’s course) / Professor Dong-myeong Kim, Dae-hwan Kim, and Seong-jin Choi (for academic advisor), Kookmin University was awarded the SID 2013 Distinguished Paper. Through this thesis, it was possible to develop the technology that extracts energy distribution of the density-of-states existing in the entire bandgap of the InGaZnO thin film transistors (Indium-Gallium-Zinc-Oxide: IGZO) by diversifying the characteristic curve of capacitance-voltage when entering photon with energy smaller than the bandgap of semiconductor materials. Apart from being simpler compared to the existing analysis method, this technology has less error parameter. Also, it is the first experimental analysis that used the electrical characteristics of TFT.

The IGZO TFT is a representative semiconductor device based on amorphous oxide semiconductor. Currently, research on this device is actively being carried out for the implementation of the next-generation display and possibility of being applied to the 3D deposition circuit. Since this device was proven with the start of mass production, large enterprises related to the display industry in Korea are attempting to lead its industrialization. In line with this, the significance of this award is emphasized even further. Especially, this technology can be applied not only to IGZO but also to various amorphous oxide semiconductors. It is also possible to provide theoretical and technical basis by optimizing the performance and reliability of the driver; thus, it is expected to bring about a greater ripple effect in the future.

The Semiconductor Devices and Integrated Circuits Lab, which won the award for the distinguished paper in the SID 2013 symposium, published a total of about 220 SCI theses and 95 academic papers (12 papers for international society and 83 papers for domestic society) as of today while having a total of 27 patents. Also, it is promoting active technical cooperation with renowned Korean businesses like Samsung Electronics, Samsung Display, and LG Display.

Furthermore, it takes pride for having stable and reliable R&D competence, as proven for being awarded 9 times in the Samsung Humantech Paper Award and twice in the Korean Conference on Semiconductors. The main author Hak-yeol Bae (Master) has conducted a number of studies for the Semiconductor Devices and Integrated Circuits Lab and published 21 SCI theses throughout his master’s course (6 papers as the main author and 15 papers as a co-author).

The SID International Symposium is a prestigious and world-renowned academic conference in the field of information and display. This annual event was held in Vancouver, Canada in 2013 from May 19th to 24th and a total of 17 out of 419 papers were selected as the excellent theses. The awards ceremony was held in the Vancouver Convention Center.